MT53E1G32D2FW-046WT MT53E1G32D2FW-046 WT:B D8CJG IC LPDDR4 di động DRAM
nhà sản xuất:
Texas Instruments
Sự miêu tả:
32Gbit 1G x 32bit 2.133 GHz TFBGA200 DRAM Mobile LPDDR4 Còn hàng D8CJG MT53E1G32D2FW-046 WT:B
Loại:
IC mạch tích hợp
Trong kho:
Còn hàng
Giá bán:
Contact us
Phương thức thanh toán:
T/T
Phương pháp vận chuyển:
Thể hiện
thông số kỹ thuật
Tên sản phẩm:
MT53E1G32D2FW-046WT MT53E1G32D2FW-046 WT:B D8CJG IC LPDDR4 di động DRAM
Sự miêu tả:
DRAM di động LPDDR4 32 Gbit 1G x 32bit 2.133 GHz TFBGA200
Loại:
Mạch tích hợp (IC)-MT53E1G32D2FW
Gói / Thùng:
BGA200
Nhiệt độ hoạt động:
-40°C ~ 85°C (TA)
Kiểu lắp:
Gắn bề mặt
người bán:
SAMSUNG
Số sản phẩm cơ sở:
MT53E1G32D2FW
Số phần thêm:
MT53E1G32D2FW-046WT MT53E1G32D2FW-046 WT:B D8CJG
Giới thiệu
MT53E1G32D2FW-046 32 Gbit 1G x 32bit 2.133 GHz TFBGA200 DRAM Mobile LPDDR4 Còn hàng
MT53E1G32D2FW-046WT MT53E1G32D2FW-046 WT:B D8CJG
Để biết thêm DRAM tương tự:
MT40A1G16TB-062E:F
MT41K256M16TW-107:P
MT40A512M16TB-062E:R
MT40A4G8NEA-062E:F
MT40A2G8SA-062E:F
MT41K64M16TW-107:J
W9825G6KH-6I
NT5AD256M16E4-JRI
MT41K128M16JT-125:K
MT40A1G8SA-062E:R
MT40A1G16RC-062E:B
MT53E512M32D1ZW-046BWT:B
NT5CC128M16JR-EK
MT47H64M16NF-25E:M
NT6AN512T32AV-J2
MT40A512M16LY-075:E
MT48LC16M16A2P-6A:G
MT40A1G16TD-062E:F
MT46V32M16P-5B:J
NT5CC256M16ER-EKI
MT40A512M16LY-062E:E
MT41K512M8DA-107:P
MT41K256M16HA-125:E
MTA18ASF2G72PDZ-3G2R1
MT53D512M32D2DS-046IT:D
IS43TR16256BL-125KBLI-TR
MT40A2G16TBB-062E:F
MT53E512M32D1ZW-046BIT:B
IS43TR16256BL-125KBLI
MT53E512M32D1ZW-046BAAT:B
Ứng dụng:
Ô tô
Mạng
Tiêu dùng
Thiết bị giải mã tín hiệu
Công nghiệp
Màn hình
IOT
Giám sát an ninh
Thiết bị đeo
Thiết bị ngoại vi PC
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Gửi RFQ
Cổ phần:
In Stock
MOQ:
10pieces